Suzhou Nengxun High Energy Semiconductor Co., Ltd. was founded in 2011 and is headquartered in Kunshan High-tech Zone, Suzhou, Jiangsu. Adopting the business model of integrated design and manufacturing (IDM), the company took the lead in developing and commercializing wide-bandgap semiconductor gallium nitride (GaN) power semiconductor chips, devices and modules in China, providing 5G mobile communication base stations, broadband communication Provide high-efficiency power semiconductor products and solutions in the fields of radio frequency and industrial control, power supply, electric vehicles and other power electronics.

RF FETs